Subject

• Undergraduate Student

  • Basics of Quantum Physics, Semiconductor Device Fabrication Process Experiment, Semiconductor Physics and Devices, Electronic Ceramics

• Graduate Student

  • Advanced Semiconductor Processing, Materials for Smart Semiconductor

Research

• Deposition process technology for low-dimensional nanomaterials

• Ultra-steep transistor switching devices

• Neuromorphic synapse devices

• High-sensitivity photodetector devices

Career

• [Career]

• Associate Professor, Department of Advanced Materials Engineering, Chungbuk National University (March 2021 – Present)

• Visiting Professor, Northeastern University, USA (March 2024 – January 2025)

• Assistant Professor, Department of Advanced Materials Engineering, Chungbuk National University (March 2017 – February 2021)

• Senior Researcher, Korea Institute of Materials Science (KIMS) (February 2013 – February 2017)

• Postdoctoral Researcher, University of California, Los Angeles (UCLA), USA (March 2012 – December 2012)

• Ph.D., Gwangju Institute of Science and Technology (GIST) (March 2009 – February 2012)

• M.S., Gwangju Institute of Science and Technology (GIST) (March 2007 – February 2009)

• Process Engineer, SK Hynix Semiconductor (July 2005 – February 2007)

• B.S., Chungbuk National University (March 1998 – February 2005)

• [Book]

• Byungjin Cho, Tae-Wook Kim, Yongsung Ji, Sunghoon Song, and Takhee Lee, “Organic resistive switching for nonvolatile memory application” in Nonvolatile Memories: Materials, Devices and Applications, edited by Tseung-Yuen Tseng and Simon M. Sze, American Scientific Publishers, Stevenson Ranch, CA, USA (2012, ISBN: 1-58883-250-3).[2012.03.23]

Thesis

• 1. Do Hyeong Kim, Seyoung Oh, Ojun Kwon, Soo-Hong Jeong, Hyun Young Seo, Eunjeong Cho, Min Jeong Kim, Wondeok Seo, Jung-Dae Kwon, Yonghun Kim, Woojin Park*, and Byungjin Cho*, "Designing Buried-Gate InGaZnO Transistors for High-Yield and Reliable Switching Characteristics" Journal of Materials Chemistry C 12, 5347 (2024) [2024.04.21] Front COVER picture article. Introduced in media.

• 2. Minseok Kim, Seyoung Oh, Byungjin Cho*, Jong Hoon Joo*, "Conduction mechanism of acceptor or donor doped ZrO2 for advanced DRAM capacitors: bulk vs thin film" ACS Applied Materials & Interfaces 15, 31627 (2023) [2023.07.05.]

• 3. Seyoung Oh, Ojun Kwon, Hyun Young Seo, Do Hyeong Kim, Soo-Hong Jeong, Hyeon Ki Park, Woojin Park, and Byungjin Cho*, "Light-stimulated long-term potentiation behavior enhanced in a HfO2/InGaZnO photonic synapse" Applied Materials Today 34, 101919 (2023) [2023.10.01.]

• 4. Hye Yeon Jang, Ojun Kwon, Jae Hyeon Nam, , Jung-Dae Kwon, Yonghun Kim, Woojin Park, and Byungjin Cho*, "Highly reproducible heterosynaptic plasticity enabled by MoS2/ZrO2-x heterostructure memtransistor" ACS Applied Materials & Interfaces 14, 52173 (2022)

• 5. Jae Hyeon Nam, Seyoung Oh, Hye Yeon Jang, Ojun Kwon, Heejeong Park, Woojin Park, Jung-Dae Kwon*, Yonghun Kim* and Byungjin Cho*, "Low Power MoS2/Nb2O5 Memtransistor Device with Highly Reliable Heterosynaptic Plasticity" Advanced Functional Materials 31, 2104174 (2021) [2021.10.01] Front COVER picture article